Вынікі пошуку M47 - AX Semiconductor-старонка "6"

Package TSOP ORIGINAL M470T6554EZ3-CD5 New original parts

Package SMD or Through Hole SAMSUNG/SMARTMODULAR M470T6554EZ3-CE6 New original parts

Package SMD or Through Hole ORIGINAL M470T6554EZ3-CE600 New original parts

Package SMD or Through Hole Samsung M470T6554GZ3-CE6 (DDR2/ 512M/ 667/ SO-DI New original parts

Package SMD or Through Hole SAMSUNG M470T6554GZ3-CE600 New original parts

DDR4 SODIMM 8 GB 1R x 8 2133 Mbps 1.2 V 260 (1G x 8) x 8 Mass Production

DDR4 SODIMM 8 GB 1R x 8 2133 Mbps 1.2 V 260 (1G x 8) x 8 EOL announced

DDR4 SODIMM 8 GB 1R x 8 2400 Mbps 1.2 V 260 (1G x 8) x 8 EOL announced

DDR4 SODIMM 8 GB 1R x 8 2666 Mbps 1.2 V 260 (1G x 8) x 8 EOL announced

DDR4 SODIMM 8 GB 1R x 8 2133 Mbps 1.2 V 260 (1G x 8) x 8 Mass Production

DDR4 SODIMM 8 GB 1R x 8 2400 Mbps 1.2 V 260 (1G x 8) x 8 Mass Production

DDR4 SODIMM 8 GB 1R x 8 2666 Mbps 1.2 V 260 (1G x 8) x 8 Mass Production

DDR4 SODIMM 8 GB 1R x 8 2666 Mbps 1.2 V 260 (1G x 8) x 8 Mass Production

DDR4 SODIMM 8 GB 1R x 8 3200 Mbps 1.2 V 260 (1G x 8) x 8 Sample

DDR4 SODIMM 8 GB 1R x 8 2666 Mbps 1.2 V 260 (1G x 8) x 8 Sample

DDR4 SODIMM 16 GB 2R x 8 2133 Mbps 1.2 V 260 (1G x 8) x 16 EOL announced

DDR4 SODIMM 16 GB 2R x 8 2400 Mbps 1.2 V 260 (1G x 8) x 16 EOL announced

DDR4 SODIMM 16 GB 2R x 8 2666 Mbps 1.2 V 260 (1G x 8) x 16 EOL announced

DDR4 SODIMM 16 GB 2R x 8 2133 Mbps 1.2 V 260 (1G x 8) x 16 Mass Production

DDR4 SODIMM 16 GB 2R x 8 2400 Mbps 1.2 V 260 (1G x 8) x 16 Mass Production